Strain dependence of dissociative adsorption of H<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si8.svg"><mml:msub><mml:mrow /><mml:mrow><mml:mn mathvariant="normal">2</mml:mn></mml:mrow></mml:msub></mml:math>O on epitaxially strained, out-of-plane polarized, BaTiO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si2.svg"><mml:msub><mml:mrow /><mml:mrow><mml:mn mathvariant="normal">3</mml:mn></mml:mrow></mml:msub></mml:math>(001) thin films
نویسندگان
چکیده
The strain dependence of the apparent activation energy desorption H2O on epitaxial, TiO2-terminated, out-of-plane polarized, BaTiO3(100) thin films has been investigated using X-ray diffraction, photoelectron spectroscopy and temperature-programmed desorption. increases significantly with in-plane strain, suggesting that strain-induced ferroelectric distortion determines strength chemical bond between dissociatively adsorbed water surface.
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ژورنال
عنوان ژورنال: Thin Solid Films
سال: 2021
ISSN: ['1879-2731', '0040-6090']
DOI: https://doi.org/10.1016/j.tsf.2020.138428